IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
550 A
Maximum Drain Source Voltage
55 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
23.25mm
Length
25.25mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
595 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
5.7mm
Χώρα Προέλευσης
Germany
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 1.152,20
€ 57,61 Μονάδας (Σε μία ράγα των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.428,73
€ 71,436 Μονάδας (Σε μία ράγα των 20) Με Φ.Π.Α
20
€ 1.152,20
€ 57,61 Μονάδας (Σε μία ράγα των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 1.428,73
€ 71,436 Μονάδας (Σε μία ράγα των 20) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
20
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
550 A
Maximum Drain Source Voltage
55 V
Series
GigaMOS, HiperFET
Package Type
SMPD
Mounting Type
Surface Mount
Pin Count
24
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Maximum Power Dissipation
830 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
23.25mm
Length
25.25mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
595 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
5.7mm
Χώρα Προέλευσης
Germany
Λεπτομέρειες Προϊόντος
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products