Nexperia PBSS305NZ,135 NPN Transistor, 5.1 A, 80 V, 4-Pin SOT-223

Κωδικός Προϊόντος της RS: 485-628Κατασκευαστής: NexperiaΚωδικός Κατασκευαστή: PBSS305NZ,135
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Τεχνικό φυλλάδιο

Προδιαγραφές

Transistor Type

NPN

Maximum DC Collector Current

5.1 A

Maximum Collector Emitter Voltage

80 V

Package Type

SOT-223 (SC-73)

Mounting Type

Surface Mount

Maximum Power Dissipation

2 W

Minimum DC Current Gain

300

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

110 MHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1.7 x 6.7 x 3.7mm

Maximum Operating Temperature

+150 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 16,20

€ 0,81 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,09

€ 1,004 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α

Nexperia PBSS305NZ,135 NPN Transistor, 5.1 A, 80 V, 4-Pin SOT-223
Επιλέγξτε συσκευασία

€ 16,20

€ 0,81 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,09

€ 1,004 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α

Nexperia PBSS305NZ,135 NPN Transistor, 5.1 A, 80 V, 4-Pin SOT-223
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
20 - 20€ 0,81€ 16,20
40 - 180€ 0,78€ 15,60
200 - 980€ 0,55€ 11,00
1000 - 1980€ 0,55€ 11,00
2000+€ 0,55€ 11,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Transistor Type

NPN

Maximum DC Collector Current

5.1 A

Maximum Collector Emitter Voltage

80 V

Package Type

SOT-223 (SC-73)

Mounting Type

Surface Mount

Maximum Power Dissipation

2 W

Minimum DC Current Gain

300

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

110 MHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1.7 x 6.7 x 3.7mm

Maximum Operating Temperature

+150 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more