STMicroelectronics STGB20H60DF IGBT, 40 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

Κωδικός Προϊόντος της RS: 860-7549Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STGB20H60DF
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Προβολή όλων σε IGBTs

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

167 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 9.35 x 4.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Λεπτομέρειες Προϊόντος

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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STMicroelectronics STGB20H60DF IGBT, 40 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
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STMicroelectronics STGB20H60DF IGBT, 40 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

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P.O.A.Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
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P.O.A.Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
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Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

167 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 9.35 x 4.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Λεπτομέρειες Προϊόντος

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
STMicroelectronics STGB14NC60KD IGBT, 25 A 600 V, 3-Pin D2PAK, Surface Mount
P.O.A.Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
STMicroelectronics STGB10NC60HD IGBT, 20 A 600 V, 3-Pin D2PAK, Surface Mount
P.O.A.Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
STMicroelectronics STGB8NC60KDT4 IGBT, 15 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
P.O.A.Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
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