STMicroelectronics N-Channel MOSFET Transistor, 15 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL26N60DM6

Κωδικός Προϊόντος της RS: 192-4658Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STL26N60DM6
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 8 x 8 HV

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

215 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

8.1mm

Length

8.1mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

0.9mm

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 11.670,00

€ 3,89 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 14.470,80

€ 4,824 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

STMicroelectronics N-Channel MOSFET Transistor, 15 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL26N60DM6

€ 11.670,00

€ 3,89 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 14.470,80

€ 4,824 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

STMicroelectronics N-Channel MOSFET Transistor, 15 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STL26N60DM6
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 8 x 8 HV

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

215 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Width

8.1mm

Length

8.1mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

0.9mm

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more