STMicroelectronics MDmesh M5 N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 STP18N55M5

Κωδικός Προϊόντος της RS: 168-7467Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STP18N55M5
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

550 V

Package Type

TO-220

Series

MDmesh M5

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

15.75mm

Λεπτομέρειες Προϊόντος

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 154,00

€ 3,08 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 190,96

€ 3,819 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

STMicroelectronics MDmesh M5 N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 STP18N55M5

€ 154,00

€ 3,08 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 190,96

€ 3,819 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

STMicroelectronics MDmesh M5 N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 STP18N55M5
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

13 A

Maximum Drain Source Voltage

550 V

Package Type

TO-220

Series

MDmesh M5

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

90 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

15.75mm

Λεπτομέρειες Προϊόντος

N-channel MDmesh™ M5 Series, STMicroelectronics

The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more