STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STP18N65M2

Κωδικός Προϊόντος της RS: 168-8839Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STP18N65M2
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

330 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Forward Diode Voltage

1.6V

Height

15.75mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 121,50

€ 2,43 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 150,66

€ 3,013 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STP18N65M2

€ 121,50

€ 2,43 Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 150,66

€ 3,013 Μονάδας (Σε μία ράγα των 50) Με Φ.Π.Α

STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STP18N65M2
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Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Series

MDmesh M2

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

330 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Forward Diode Voltage

1.6V

Height

15.75mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more