Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
20.15mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics

€ 7,26
€ 7,26 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 9,00
€ 9,00 Μονάδας Με Φ.Π.Α
Standard
1
€ 7,26
€ 7,26 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 9,00
€ 9,00 Μονάδας Με Φ.Π.Α
Standard
1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Quantity Ποσότητα | Τιμή μονάδας |
---|---|
1 - 9 | € 7,26 |
10 - 24 | € 6,66 |
25 - 99 | € 6,37 |
100 - 499 | € 5,17 |
500+ | € 4,67 |

Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
800 V
Package Type
TO-247
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Length
15.75mm
Maximum Operating Temperature
+150 °C
Width
5.15mm
Typical Gate Charge @ Vgs
72 nC @ 10 V
Height
20.15mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
