Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)

Κωδικός Προϊόντος της RS: 695-4849Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: SSM6N35FU(TE85L,F)
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Package Type

US6

Series

SSM6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Length

1.25mm

Maximum Operating Temperature

+150 °C

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.9mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

Dual MOSFET N-Channel SSM6Nxx, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 2,90

€ 0,29 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3,60

€ 0,36 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)

€ 2,90

€ 0,29 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3,60

€ 0,36 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

Toshiba SSM6 Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US6 SSM6N35FU(TE85L,F)
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

20 V

Package Type

US6

Series

SSM6

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

20 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-10 V, +10 V

Length

1.25mm

Maximum Operating Temperature

+150 °C

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Height

0.9mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

Dual MOSFET N-Channel SSM6Nxx, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more