Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O

Κωδικός Προϊόντος της RS: 168-7964Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TK20J60W,S1VQ(O
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Length

15.5mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

20mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 183,25

€ 7,33 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 227,23

€ 9,089 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O

€ 183,25

€ 7,33 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 227,23

€ 9,089 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Length

15.5mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

20mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more