Toshiba TK N-Channel MOSFET, 40 A, 40 V, 3-Pin DP TK40P04M1(T6RSS-Q)
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
40 V
Series
TK
Package Type
DP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
47 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
15 nC @ 5 V, 29 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 3.50
€ 0.70 Each (In a Pack of 5) (Exc. Vat)
€ 4.34
€ 0.868 Each (In a Pack of 5) (inc. VAT)
5
€ 3.50
€ 0.70 Each (In a Pack of 5) (Exc. Vat)
€ 4.34
€ 0.868 Each (In a Pack of 5) (inc. VAT)
5
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
40 V
Series
TK
Package Type
DP
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
47 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10mm
Typical Gate Charge @ Vgs
15 nC @ 5 V, 29 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.3mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products