Toshiba TK N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Κωδικός Προϊόντος της RS: 796-5106Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TK58E06N1
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

105 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Height

15.1mm

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

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€ 10,45

€ 2,09 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,96

€ 2,592 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Toshiba TK N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1
Επιλέγξτε συσκευασία

€ 10,45

€ 2,09 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,96

€ 2,592 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Toshiba TK N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

105 A

Maximum Drain Source Voltage

60 V

Series

TK

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

5.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.16mm

Typical Gate Charge @ Vgs

46 nC @ 10 V

Height

15.1mm

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more