Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRFD120PBF

Κωδικός Προϊόντος της RS: 178-0921Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFD120PBF
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.29mm

Length

5mm

Typical Gate Charge @ Vgs

16 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

3.37mm

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 63,00

€ 0,63 Μονάδας (Σε μία ράγα των 100) (Exc. Vat)Χωρίς Φ.Π.Α

€ 78,12

€ 0,781 Μονάδας (Σε μία ράγα των 100) Με Φ.Π.Α

Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRFD120PBF

€ 63,00

€ 0,63 Μονάδας (Σε μία ράγα των 100) (Exc. Vat)Χωρίς Φ.Π.Α

€ 78,12

€ 0,781 Μονάδας (Σε μία ράγα των 100) Με Φ.Π.Α

Vishay N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP IRFD120PBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Ράγα
100 - 100€ 0,63€ 63,00
200 - 400€ 0,60€ 60,00
500+€ 0,55€ 55,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.29mm

Length

5mm

Typical Gate Charge @ Vgs

16 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

3.37mm

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more