Vishay Dual N/P-Channel MOSFET, 4.3 A, 4.5 A, 12 V, 6-Pin SOT-363 SIA517DJ-T1-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 4.5 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ, 170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
2.15mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.15mm
Typical Gate Charge @ Vgs
13.1 nC @ 8 V, 9.7 nC @ 8 V
Height
0.8mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 130,00
€ 0,65 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 161,20
€ 0,806 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
200
€ 130,00
€ 0,65 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 161,20
€ 0,806 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
200
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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| Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
|---|---|---|
| 200 - 480 | € 0,65 | € 13,00 |
| 500 - 980 | € 0,55 | € 11,00 |
| 1000 - 1980 | € 0,52 | € 10,40 |
| 2000+ | € 0,47 | € 9,40 |
Ideate. Create. Collaborate
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No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 4.5 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
65 mΩ, 170 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
6.5 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Width
2.15mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.15mm
Typical Gate Charge @ Vgs
13.1 nC @ 8 V, 9.7 nC @ 8 V
Height
0.8mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products