Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
50A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
75ns
Peak Non-Repetitive Forward Surge Current
225A
Λεπτομέρειες Προϊόντος
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 331,50
€ 13,26 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 411,06
€ 16,442 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α
25
€ 331,50
€ 13,26 Μονάδας (Σε μία ράγα των 25) (Exc. Vat)Χωρίς Φ.Π.Α
€ 411,06
€ 16,442 Μονάδας (Σε μία ράγα των 25) Με Φ.Π.Α
25
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
---|---|---|
25 - 25 | € 13,26 | € 331,50 |
50 - 100 | € 12,11 | € 302,75 |
125+ | € 11,62 | € 290,50 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
50A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
75ns
Peak Non-Repetitive Forward Surge Current
225A
Λεπτομέρειες Προϊόντος
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.