Cypress Semiconductor 256kbit Parallel FRAM Memory 32-Pin TSOP, FM28V020-TG
Τεχνικό φυλλάδιο
Προδιαγραφές
Memory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Parallel
Maximum Random Access Time
70ns
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
32
Dimensions
11.9 x 8.1 x 1.05mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Λεπτομέρειες Προϊόντος
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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P.O.A.
234
P.O.A.
234
Τεχνικό φυλλάδιο
Προδιαγραφές
Memory Size
256kbit
Organisation
32K x 8 bit
Interface Type
Parallel
Maximum Random Access Time
70ns
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
32
Dimensions
11.9 x 8.1 x 1.05mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Number of Bits per Word
8bit
Number of Words
32K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2 V
Λεπτομέρειες Προϊόντος
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.