Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
395 W
Package Type
34MM Module
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.2mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 125,90
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 156,12
Μονάδας Με Φ.Π.Α
Standard
1
€ 125,90
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 156,12
Μονάδας Με Φ.Π.Α
Standard
1
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας |
---|---|
1 - 1 | € 125,90 |
2 - 4 | € 121,42 |
5 - 9 | € 118,09 |
10 - 19 | € 114,59 |
20+ | € 108,26 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
75 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
395 W
Package Type
34MM Module
Configuration
Series
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.2mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.