Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
39 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
175 W
Number of Transistors
7
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Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
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Συσκευασία Παραγωγής (Tray)
1
P.O.A.
Infineon FP25R12W2T4BOMA1 IGBT Module, 39 A 1200 V
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία
Συσκευασία Παραγωγής (Tray)
1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
39 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
+/-20V
Maximum Power Dissipation
175 W
Number of Transistors
7
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products