N-Channel MOSFET, 4 A, 800 V, 3 + Tab-Pin TO-220FP Infineon IPA80R1K4P7XKSA1

Κωδικός Προϊόντος της RS: 133-9822Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPA80R1K4P7XKSA1IMPA: 0
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Τεχνικό φυλλάδιο

Προδιαγραφές

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Pin Count

3 + Tab

Minimum Operating Temperature

-55 °C

Transistor Configuration

Single

Forward Diode Voltage

0.9V

Mounting Type

Through Hole

Minimum Gate Threshold Voltage

2.5V

Maximum Operating Temperature

+150 °C

Maximum Gate Threshold Voltage

3.5V

Maximum Drain Source Voltage

800 V

Maximum Gate Source Voltage

+30 V

Maximum Continuous Drain Current

4 A

Maximum Power Dissipation

24 W

Width

4.9mm

Series

CoolMOS P7

Package Type

TO-220FP

Length

10.65mm

Height

16.15mm

Maximum Drain Source Resistance

3.1 Ω

Typical Gate Charge @ Vgs

10 nC @ 10 V

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Motor Driven

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P.O.A.

N-Channel MOSFET, 4 A, 800 V, 3 + Tab-Pin TO-220FP Infineon IPA80R1K4P7XKSA1
sticker-730

P.O.A.

N-Channel MOSFET, 4 A, 800 V, 3 + Tab-Pin TO-220FP Infineon IPA80R1K4P7XKSA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
sticker-730

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Pin Count

3 + Tab

Minimum Operating Temperature

-55 °C

Transistor Configuration

Single

Forward Diode Voltage

0.9V

Mounting Type

Through Hole

Minimum Gate Threshold Voltage

2.5V

Maximum Operating Temperature

+150 °C

Maximum Gate Threshold Voltage

3.5V

Maximum Drain Source Voltage

800 V

Maximum Gate Source Voltage

+30 V

Maximum Continuous Drain Current

4 A

Maximum Power Dissipation

24 W

Width

4.9mm

Series

CoolMOS P7

Package Type

TO-220FP

Length

10.65mm

Height

16.15mm

Maximum Drain Source Resistance

3.1 Ω

Typical Gate Charge @ Vgs

10 nC @ 10 V

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Motor Driven

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more