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N-Channel MOSFET, 31 A, 600 V, 3-Pin D2PAK Infineon IPB60R099CPAATMA1

Κωδικός Προϊόντος της RS: 753-3002Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPB60R099CPAATMA1
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

105 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Minimum Gate Threshold Voltage

20V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.31mm

Width

9.45mm

Transistor Material

Si

Height

4.57mm

Minimum Operating Temperature

-40 °C

Series

CoolMOS CP

Λεπτομέρειες Προϊόντος

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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N-Channel MOSFET, 31 A, 650 V, 3-Pin D2PAK Infineon IPB60R099CPATMA1
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

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N-Channel MOSFET, 31 A, 600 V, 3-Pin D2PAK Infineon IPB60R099CPAATMA1
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N-Channel MOSFET, 31 A, 600 V, 3-Pin D2PAK Infineon IPB60R099CPAATMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
N-Channel MOSFET, 31 A, 650 V, 3-Pin D2PAK Infineon IPB60R099CPATMA1
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

105 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Minimum Gate Threshold Voltage

20V

Maximum Power Dissipation

255 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.31mm

Width

9.45mm

Transistor Material

Si

Height

4.57mm

Minimum Operating Temperature

-40 °C

Series

CoolMOS CP

Λεπτομέρειες Προϊόντος

Infineon CoolMOS™CP Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
N-Channel MOSFET, 31 A, 650 V, 3-Pin D2PAK Infineon IPB60R099CPATMA1
P.O.A.Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α