N-Channel MOSFET, 17.5 A, 700 V, 3-Pin TO-247 Infineon IPW65R190CFDFKSA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ CFD
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Transistor Material
Si
Width
5.21mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
21.1mm
Λεπτομέρειες Προϊόντος
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 8,68
€ 2,17 Μονάδας (Σε ένα πακέτο των 4) (Exc. Vat)Χωρίς Φ.Π.Α
€ 10,76
€ 2,691 Μονάδας (Σε ένα πακέτο των 4) Με Φ.Π.Α
Standard
4
€ 8,68
€ 2,17 Μονάδας (Σε ένα πακέτο των 4) (Exc. Vat)Χωρίς Φ.Π.Α
€ 10,76
€ 2,691 Μονάδας (Σε ένα πακέτο των 4) Με Φ.Π.Α
Standard
4
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
700 V
Series
CoolMOS™ CFD
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
151 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Length
16.13mm
Typical Gate Charge @ Vgs
68 nC @ 10 V
Transistor Material
Si
Width
5.21mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
21.1mm
Λεπτομέρειες Προϊόντος
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products