N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF

Κωδικός Προϊόντος της RS: 914-8154Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRF540NPBFIMPA: 0
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Τεχνικό φυλλάδιο

Προδιαγραφές

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Transistor Material

Si

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Configuration

Single

Mounting Type

Through Hole

Minimum Gate Threshold Voltage

2V

Maximum Operating Temperature

+175 °C

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

4V

Series

HEXFET

Width

4.69mm

Package Type

TO-220AB

Length

10.54mm

Height

8.77mm

Maximum Power Dissipation

130 W

Maximum Continuous Drain Current

33 A

Maximum Drain Source Resistance

44 mΩ

Typical Gate Charge @ Vgs

71 nC @ 10 V

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1,11

Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,376

Μονάδας (Σε ένα πακέτο των 20) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF
Επιλέγξτε συσκευασία
sticker-730

€ 1,11

Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,376

Μονάδας (Σε ένα πακέτο των 20) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία
sticker-730

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
20 - 80€ 1,11€ 22,20
100 - 180€ 0,88€ 17,60
200 - 480€ 0,86€ 17,20
500 - 980€ 0,81€ 16,20
1000+€ 0,76€ 15,20

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Transistor Material

Si

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Configuration

Single

Mounting Type

Through Hole

Minimum Gate Threshold Voltage

2V

Maximum Operating Temperature

+175 °C

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

4V

Series

HEXFET

Width

4.69mm

Package Type

TO-220AB

Length

10.54mm

Height

8.77mm

Maximum Power Dissipation

130 W

Maximum Continuous Drain Current

33 A

Maximum Drain Source Resistance

44 mΩ

Typical Gate Charge @ Vgs

71 nC @ 10 V

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more