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N-Channel MOSFET Transistor, 48 A, 60 V, 3-Pin D2PAK Infineon IRFZ44ESPBF

Κωδικός Προϊόντος της RS: 541-0519Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRFZ44ESPBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

9.65mm

Transistor Material

Si

Height

4.83mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

P.O.A.

N-Channel MOSFET Transistor, 48 A, 60 V, 3-Pin D2PAK Infineon IRFZ44ESPBF

P.O.A.

N-Channel MOSFET Transistor, 48 A, 60 V, 3-Pin D2PAK Infineon IRFZ44ESPBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

48 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

60 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

9.65mm

Transistor Material

Si

Height

4.83mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more