Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
430 V
Maximum Power Dissipation
125 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1kHz
Transistor Configuration
Single
Dimensions
10.54 x 4.69 x 15.24mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Λεπτομέρειες Προϊόντος
Automotive Ignition IGBT, Infineon
The IGBT is optimised for driving the coil in the harsh environment of automotive ignition systems. Active voltage clamps on the IGBT Gate-Emitter and Gate-Collector are included in the semiconductor package.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.
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P.O.A.
Συσκευασία Παραγωγής (Ράγα)
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Συσκευασία Παραγωγής (Ράγα)
5
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
430 V
Maximum Power Dissipation
125 W
Package Type
TO-220AB
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1kHz
Transistor Configuration
Single
Dimensions
10.54 x 4.69 x 15.24mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Λεπτομέρειες Προϊόντος
Automotive Ignition IGBT, Infineon
The IGBT is optimised for driving the coil in the harsh environment of automotive ignition systems. Active voltage clamps on the IGBT Gate-Emitter and Gate-Collector are included in the semiconductor package.
IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.