Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current
88 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Package Type
SOT-227B
Mounting Type
Surface Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
38.23 x 25.25 x 9.6mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Χώρα Προέλευσης
United States
Λεπτομέρειες Προϊόντος
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 39,04
Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 48,41
Μονάδας (Σε μία ράγα των 10) (Including VAT) Με Φ.Π.Α
10
€ 39,04
Μονάδας (Σε μία ράγα των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 48,41
Μονάδας (Σε μία ράγα των 10) (Including VAT) Με Φ.Π.Α
10
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
IXYSMaximum Continuous Collector Current
88 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
290 W
Package Type
SOT-227B
Mounting Type
Surface Mount
Channel Type
N
Pin Count
4
Transistor Configuration
Single
Dimensions
38.23 x 25.25 x 9.6mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+125 °C
Χώρα Προέλευσης
United States
Λεπτομέρειες Προϊόντος
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.