Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
LittlefuseMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
440 V
Maximum Gate Emitter Voltage
±15V
Maximum Power Dissipation
125 W
Package Type
DPAK
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 7.49 x 2.38mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Λεπτομέρειες Προϊόντος
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
LittlefuseMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
440 V
Maximum Gate Emitter Voltage
±15V
Maximum Power Dissipation
125 W
Package Type
DPAK
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
6.73 x 7.49 x 2.38mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+175 °C
Λεπτομέρειες Προϊόντος
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.