N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MagnaChip MDF16N50GTH

Κωδικός Προϊόντος της RS: 871-4921PΚατασκευαστής: MagnaChipΚωδικός Κατασκευαστή: MDF16N50GTH
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

550 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

49.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Width

4.93mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

34.9 nC @ 10 V

Height

16.13mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Χώρα Προέλευσης

Korea, Republic Of

Λεπτομέρειες Προϊόντος

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

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N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MagnaChip MDF16N50GTH
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P.O.A.

N-Channel MOSFET, 16 A, 550 V, 3-Pin TO-220F MagnaChip MDF16N50GTH
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

550 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

350 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

49.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Width

4.93mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.71mm

Typical Gate Charge @ Vgs

34.9 nC @ 10 V

Height

16.13mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Χώρα Προέλευσης

Korea, Republic Of

Λεπτομέρειες Προϊόντος

High Voltage (HV) MOSFET

High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.

MOSFET Transistors, MagnaChip

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more