GaN N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220 onsemi NTP8G202NG
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
65 W
Transistor Configuration
Cascode
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.53mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
4.83mm
Transistor Material
GaN
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2.1V
Height
15.75mm
Χώρα Προέλευσης
Philippines
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P.O.A.
1
P.O.A.
1
Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
600 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
65 W
Transistor Configuration
Cascode
Maximum Gate Source Voltage
-18 V, +18 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.53mm
Typical Gate Charge @ Vgs
6.2 nC @ 4.5 V
Width
4.83mm
Transistor Material
GaN
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
2.1V
Height
15.75mm
Χώρα Προέλευσης
Philippines
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products