Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3-F155

Κωδικός Προϊόντος της RS: 146-4096Κατασκευαστής: ON SemiconductorΚωδικός Κατασκευαστή: FCH040N65S3-F155
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

SuperFET III

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

417 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Maximum Operating Temperature

+150 °C

Length

16.26mm

Typical Gate Charge @ Vgs

136 @ 10 V nC

Width

5.3mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Height

21.08mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

P.O.A.

Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3-F155

P.O.A.

Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3-F155
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

SuperFET III

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

417 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Maximum Operating Temperature

+150 °C

Length

16.26mm

Typical Gate Charge @ Vgs

136 @ 10 V nC

Width

5.3mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Height

21.08mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more