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N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB onsemi HUF75339P3

Κωδικός Προϊόντος της RS: 671-5363PΚατασκευαστής: onsemiΚωδικός Κατασκευαστή: HUF75339P3
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

55 V

Series

UltraFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

110 nC @ 20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

4.83mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.4mm

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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N-Channel MOSFET Transistor, 75 A, 55 V, 3-Pin TO-220AB Fairchild HUF75337P3
P.O.A.Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

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Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 2,34

Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,902

Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB onsemi HUF75339P3
Επιλέγξτε συσκευασία

€ 2,34

Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,902

Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α

N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB onsemi HUF75339P3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
N-Channel MOSFET Transistor, 75 A, 55 V, 3-Pin TO-220AB Fairchild HUF75337P3
P.O.A.Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

55 V

Series

UltraFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

110 nC @ 20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Width

4.83mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.4mm

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
N-Channel MOSFET Transistor, 75 A, 55 V, 3-Pin TO-220AB Fairchild HUF75337P3
P.O.A.Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α