Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
3085pF
Maximum Operating Temperature
+175 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 5,92
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,341
Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α
30
€ 5,92
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,341
Μονάδας (Σε μία ράγα των 30) (Including VAT) Με Φ.Π.Α
30
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
---|---|---|
30 - 90 | € 5,92 | € 177,60 |
120 - 240 | € 4,81 | € 144,30 |
270 - 480 | € 4,61 | € 138,30 |
510 - 990 | € 4,49 | € 134,70 |
1020+ | € 4,46 | € 133,80 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiMaximum Continuous Collector Current
100 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
16.25 x 5.3 x 21.4mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
3085pF
Maximum Operating Temperature
+175 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.