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N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-220FP STMicroelectronics STF35N60DM2

Κωδικός Προϊόντος της RS: 111-6464Κατασκευαστής: STMicroelectronicsΚωδικός Κατασκευαστή: STF35N60DM2
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Series

MDmesh DM2

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

54 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

16.4mm

Λεπτομέρειες Προϊόντος

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 10,64

€ 5,32 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 13,19

€ 6,597 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α

N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-220FP STMicroelectronics STF35N60DM2
Επιλέγξτε συσκευασία

€ 10,64

€ 5,32 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 13,19

€ 6,597 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α

N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-220FP STMicroelectronics STF35N60DM2
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

600 V

Series

MDmesh DM2

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

54 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

16.4mm

Λεπτομέρειες Προϊόντος

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more