SiC N-Channel MOSFET Module, 52 A, 600 V Depletion, 3-Pin TO-247 STMicroelectronics STWA67N60M6
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
ST
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.045 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Transistor Material
SiC
Number of Elements per Chip
1
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€ 9,96
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 12,35
Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 9,96
Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 12,35
Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
600 V
Package Type
TO-247
Series
ST
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.045 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
4.75V
Transistor Material
SiC
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products