N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS Toshiba TK25A60X5,S5X(M

Κωδικός Προϊόντος της RS: 125-0554Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TK25A60X5,S5X(M
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Forward Diode Voltage

1.7V

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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P.O.A.

N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS Toshiba TK25A60X5,S5X(M

2

Διατίθεται σε πολλαπλάσια από 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

P.O.A.

N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220SIS Toshiba TK25A60X5,S5X(M
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

2

Διατίθεται σε πολλαπλάσια από 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

45 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Transistor Material

Si

Length

10mm

Typical Gate Charge @ Vgs

60 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15mm

Forward Diode Voltage

1.7V

Λεπτομέρειες Προϊόντος

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more