N-Channel MOSFET, 59 A, 100 V, 8-Pin SOP Advanced Toshiba TPH8R80ANH

Κωδικός Προϊόντος της RS: 168-7790Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TPH8R80ANH
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

100 V

Package Type

SOP Advanced

Series

TPH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

61 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

5mm

Number of Elements per Chip

1

Height

0.95mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

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P.O.A.

N-Channel MOSFET, 59 A, 100 V, 8-Pin SOP Advanced Toshiba TPH8R80ANH

5000

Διατίθεται σε πολλαπλάσια από 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

P.O.A.

N-Channel MOSFET, 59 A, 100 V, 8-Pin SOP Advanced Toshiba TPH8R80ANH
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

5000

Διατίθεται σε πολλαπλάσια από 5000
5000P.O.A.
10000P.O.A.
15000P.O.A.
20000P.O.A.
25000P.O.A.
30000P.O.A.
35000P.O.A.
40000P.O.A.
45000P.O.A.
50000P.O.A.
55000P.O.A.
60000P.O.A.
65000P.O.A.
70000P.O.A.
75000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

100 V

Package Type

SOP Advanced

Series

TPH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

61 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

5mm

Number of Elements per Chip

1

Height

0.95mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more