Dual N-Channel MOSFET, 60 A, 30 V, 8-Pin PowerPAK SO-8 Vishay Siliconix SIRC06DP-T1-GE3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Width
5mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
38.5 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.7V
Χώρα Προέλευσης
China
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P.O.A.
3000
P.O.A.
3000
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Width
5mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.99mm
Typical Gate Charge @ Vgs
38.5 nC @ 10 V
Height
1.07mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.7V
Χώρα Προέλευσης
China