P-Channel MOSFET, 5.6 A, 100 V, 3-Pin DPAK Vishay IRFR9120TRPBF

Κωδικός Προϊόντος της RS: 165-7218Κατασκευαστής: VishayΚωδικός Κατασκευαστή: IRFR9120TRPBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,88

Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,091

Μονάδας (Σε ένα καρούλι των 2000) Με Φ.Π.Α

P-Channel MOSFET, 5.6 A, 100 V, 3-Pin DPAK Vishay IRFR9120TRPBF

€ 0,88

Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,091

Μονάδας (Σε ένα καρούλι των 2000) Με Φ.Π.Α

P-Channel MOSFET, 5.6 A, 100 V, 3-Pin DPAK Vishay IRFR9120TRPBF
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

18 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more