Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 3.1 A
Maximum Drain Source Voltage
30 V
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
180 mΩ, 330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Length
6.7mm
Typical Gate Charge @ Vgs
3.9 nC @ 10 V, 5.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Product details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 41.55
€ 2.77 Each (Supplied on a Reel) (Exc. Vat)
€ 51.52
€ 3.435 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
15
€ 41.55
€ 2.77 Each (Supplied on a Reel) (Exc. Vat)
€ 51.52
€ 3.435 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
15
Stock information temporarily unavailable.
quantity | Unit price | Per Reel |
---|---|---|
15 - 45 | € 2.77 | € 13.85 |
50 - 245 | € 2.51 | € 12.55 |
250 - 495 | € 2.19 | € 10.95 |
500+ | € 1.93 | € 9.65 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 3.1 A
Maximum Drain Source Voltage
30 V
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
180 mΩ, 330 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Length
6.7mm
Typical Gate Charge @ Vgs
3.9 nC @ 10 V, 5.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Product details