N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 Infineon IRF7807ZTRPBF

Κωδικός Προϊόντος της RS: 170-2263Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IRF7807ZTRPBF
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Width

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

1.5mm

Series

IRF7807ZPbF

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P.O.A.

Μονάδας (Σε ένα καρούλι των 4000) (Exc. Vat)Χωρίς Φ.Π.Α

N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 Infineon IRF7807ZTRPBF

4000

Διατίθεται σε πολλαπλάσια από 4000
4000P.O.A.
8000P.O.A.
12000P.O.A.
16000P.O.A.
20000P.O.A.
24000P.O.A.
28000P.O.A.
32000P.O.A.
36000P.O.A.
40000P.O.A.
44000P.O.A.
48000P.O.A.
52000P.O.A.
56000P.O.A.
60000P.O.A.

P.O.A.

Μονάδας (Σε ένα καρούλι των 4000) (Exc. Vat)Χωρίς Φ.Π.Α

N-Channel MOSFET, 11 A, 30 V, 8-Pin SO-8 Infineon IRF7807ZTRPBF

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

4000

Διατίθεται σε πολλαπλάσια από 4000
4000P.O.A.
8000P.O.A.
12000P.O.A.
16000P.O.A.
20000P.O.A.
24000P.O.A.
28000P.O.A.
32000P.O.A.
36000P.O.A.
40000P.O.A.
44000P.O.A.
48000P.O.A.
52000P.O.A.
56000P.O.A.
60000P.O.A.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

30 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.25V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

7.2 nC @ 4.5 V

Width

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Minimum Operating Temperature

-55 °C

Height

1.5mm

Series

IRF7807ZPbF

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more