Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Series
STN6N60M2
Package Type
SOT-223
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
6.8mm
Height
1.8mm
Automotive Standard
No
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 2.080,00
€ 0,52 Μονάδας (Σε ένα καρούλι των 4000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.579,20
€ 0,645 Μονάδας (Σε ένα καρούλι των 4000) Με Φ.Π.Α
4000
€ 2.080,00
€ 0,52 Μονάδας (Σε ένα καρούλι των 4000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.579,20
€ 0,645 Μονάδας (Σε ένα καρούλι των 4000) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
4000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
5.5A
Maximum Drain Source Voltage Vds
25V
Series
STN6N60M2
Package Type
SOT-223
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
1.25Ω
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Forward Voltage Vf
1.6V
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
6W
Maximum Operating Temperature
150°C
Standards/Approvals
No
Length
6.8mm
Height
1.8mm
Automotive Standard
No
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
The STMicroelectronics device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
