Taiwan Semi N-Channel MOSFET, 3.3 A, 600 V, 3-Pin DPAK TSM60NB1R4CP ROG

Κωδικός Προϊόντος της RS: 171-3628Κατασκευαστής: Taiwan SemiconductorΚωδικός Κατασκευαστή: TSM60NB1R4CP ROG
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

5.8mm

Length

6.5mm

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

2.3mm

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P.O.A.

Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

Taiwan Semi N-Channel MOSFET, 3.3 A, 600 V, 3-Pin DPAK TSM60NB1R4CP ROG

2500

Διατίθεται σε πολλαπλάσια από 2500
2500P.O.A.
5000P.O.A.
7500P.O.A.
10000P.O.A.
12500P.O.A.
15000P.O.A.
17500P.O.A.
20000P.O.A.
22500P.O.A.
25000P.O.A.
27500P.O.A.
30000P.O.A.
32500P.O.A.
35000P.O.A.
37500P.O.A.

P.O.A.

Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

Taiwan Semi N-Channel MOSFET, 3.3 A, 600 V, 3-Pin DPAK TSM60NB1R4CP ROG

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

2500

Διατίθεται σε πολλαπλάσια από 2500
2500P.O.A.
5000P.O.A.
7500P.O.A.
10000P.O.A.
12500P.O.A.
15000P.O.A.
17500P.O.A.
20000P.O.A.
22500P.O.A.
25000P.O.A.
27500P.O.A.
30000P.O.A.
32500P.O.A.
35000P.O.A.
37500P.O.A.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Taiwan Semiconductor

Channel Type

N

Maximum Continuous Drain Current

3.3 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

5.8mm

Length

6.5mm

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

2.3mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more