Toshiba N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220SIS TK5A50D,S5Q(J

Κωδικός Προϊόντος της RS: 144-5236Κατασκευαστής: ToshibaΚωδικός Κατασκευαστή: TK5A50D,S5Q(J
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.4V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

35 W @ 25 °C

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

-1.7V

Height

15mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

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€ 12,00

€ 0,60 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α

€ 14,88

€ 0,744 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α

Toshiba N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220SIS TK5A50D,S5Q(J

€ 12,00

€ 0,60 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α

€ 14,88

€ 0,744 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α

Toshiba N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220SIS TK5A50D,S5Q(J

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
20 - 40€ 0,60€ 12,00
60+€ 0,55€ 11,00

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.4V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

35 W @ 25 °C

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Number of Elements per Chip

1

Width

4.5mm

Length

10mm

Typical Gate Charge @ Vgs

11 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

-1.7V

Height

15mm

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more