Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
BournsMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
416 W
Number of Transistors
1
Package Type
TO-247
Configuration
Single Diode
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Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
Επιλέγξτε συσκευασία
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P.O.A.
Bourns BIDW50N65T Single Diode IGBT, 50 A 650 V TO-247
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία
2
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
BournsMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
416 W
Number of Transistors
1
Package Type
TO-247
Configuration
Single Diode
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products