Infineon SRAM, CY62148ELL-45ZSXI- 4Mbit

Τεχνικό φυλλάδιο
Προδιαγραφές
Memory Size
4Mbit
Organisation
512K x 8 bit
Number of Words
512K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
32
Dimensions
21.08 x 10.29 x 1.05mm
Height
1.05mm
Maximum Operating Supply Voltage
5.5 V
Minimum Operating Supply Voltage
4.5 V
Maximum Operating Temperature
+85 °C
Length
21.08mm
Width
10.29mm
Minimum Operating Temperature
-40 °C
Χώρα Προέλευσης
Taiwan, Province Of China
Λεπτομέρειες Προϊόντος
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.
SRAM (Static Random Access Memory)
P.O.A.
Συσκευασία Παραγωγής (Tray)
1
P.O.A.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Tray)
1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Τεχνικό φυλλάδιο
Προδιαγραφές
Memory Size
4Mbit
Organisation
512K x 8 bit
Number of Words
512K
Number of Bits per Word
8bit
Maximum Random Access Time
45ns
Address Bus Width
8bit
Clock Frequency
1MHz
Low Power
Yes
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
32
Dimensions
21.08 x 10.29 x 1.05mm
Height
1.05mm
Maximum Operating Supply Voltage
5.5 V
Minimum Operating Supply Voltage
4.5 V
Maximum Operating Temperature
+85 °C
Length
21.08mm
Width
10.29mm
Minimum Operating Temperature
-40 °C
Χώρα Προέλευσης
Taiwan, Province Of China
Λεπτομέρειες Προϊόντος
Asynchronous Micropower (MoBL) SRAM Memory, Cypress Semiconductor
The MoBL low-power SRAM memory devices have high efficiency and offer industry leading standby power dissipation (maximum) specifications.

