Infineon 64kbit Parallel FRAM Memory 28-Pin SOIC, FM16W08-SG
Τεχνικό φυλλάδιο
Προδιαγραφές
Memory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
28
Dimensions
18.11 x 7.62 x 2.37mm
Maximum Operating Supply Voltage
5.5 V
Maximum Operating Temperature
+85 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Λεπτομέρειες Προϊόντος
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Τεχνικό φυλλάδιο
Προδιαγραφές
Memory Size
64kbit
Organisation
8K x 8 bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
28
Dimensions
18.11 x 7.62 x 2.37mm
Maximum Operating Supply Voltage
5.5 V
Maximum Operating Temperature
+85 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Λεπτομέρειες Προϊόντος
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products