Cypress Semiconductor NOR 128Mbit CFI, Parallel Flash Memory 56-Pin TSOP, S29GL128P11TFI020

Τεχνικό φυλλάδιο
Προδιαγραφές
Memory Size
128Mbit
Interface Type
CFI, Parallel
Package Type
TSOP
Pin Count
56
Organisation
8M x 16 bit
Mounting Type
Surface Mount
Cell Type
NOR
Minimum Operating Supply Voltage
2.7 V
Maximum Operating Supply Voltage
3.6 V
Dimensions
18.5 x 14.1 x 1.05mm
Number of Words
8M
Minimum Operating Temperature
-40 °C
Number of Bits per Word
16bit
Maximum Operating Temperature
+85 °C
Maximum Random Access Time
110ns
Λεπτομέρειες Προϊόντος
Flash Memory using MirrorBit Technology, Cypress Semiconductor (Spansion)
Flash Memory
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
P.O.A.
Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
Standard
2
P.O.A.
Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
2
Τεχνικό φυλλάδιο
Προδιαγραφές
Memory Size
128Mbit
Interface Type
CFI, Parallel
Package Type
TSOP
Pin Count
56
Organisation
8M x 16 bit
Mounting Type
Surface Mount
Cell Type
NOR
Minimum Operating Supply Voltage
2.7 V
Maximum Operating Supply Voltage
3.6 V
Dimensions
18.5 x 14.1 x 1.05mm
Number of Words
8M
Minimum Operating Temperature
-40 °C
Number of Bits per Word
16bit
Maximum Operating Temperature
+85 °C
Maximum Random Access Time
110ns
Λεπτομέρειες Προϊόντος
Flash Memory using MirrorBit Technology, Cypress Semiconductor (Spansion)
Flash Memory
FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.

