Diodes Inc N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138-7-F

Κωδικός Προϊόντος της RS: 738-4939Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: BSS138-7-F
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 5,00

€ 0,05 Μονάδας (Σε ένα πακέτο των 100) (Exc. Vat)Χωρίς Φ.Π.Α

€ 6,20

€ 0,062 Μονάδας (Σε ένα πακέτο των 100) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138-7-F
Επιλέγξτε συσκευασία

€ 5,00

€ 0,05 Μονάδας (Σε ένα πακέτο των 100) (Exc. Vat)Χωρίς Φ.Π.Α

€ 6,20

€ 0,062 Μονάδας (Σε ένα πακέτο των 100) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138-7-F

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Height

1.1mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more