Dual N/P-Channel MOSFET, 110 mA, 130 mA, 50 V, 60 V, 6-Pin SOT-363 Diodes Inc BSS8402DW-7-F
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
110 mA, 130 mA
Maximum Drain Source Voltage
50 V, 60 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
10 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Λεπτομέρειες Προϊόντος
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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P.O.A.
Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α
Standard
25
P.O.A.
Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
25
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
110 mA, 130 mA
Maximum Drain Source Voltage
50 V, 60 V
Package Type
SOT-363 (SC-88)
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
10 Ω, 13.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
200 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
2.2mm
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Λεπτομέρειες Προϊόντος
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products