Diodes Inc P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-323 BSS84W-7-F

Κωδικός Προϊόντος της RS: 708-2412PΚατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: BSS84W-7-F
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

2.2mm

Maximum Operating Temperature

+150 °C

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 9,00

€ 0,18 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 11,16

€ 0,223 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Diodes Inc P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-323 BSS84W-7-F
Επιλέγξτε συσκευασία

€ 9,00

€ 0,18 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 11,16

€ 0,223 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Diodes Inc P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-323 BSS84W-7-F

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

2.2mm

Maximum Operating Temperature

+150 °C

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more