Dual N/P-Channel MOSFET, 6.8 A, 9 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LNS-7

Κωδικός Προϊόντος της RS: 133-3341Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMC3016LNS-7
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N, P

Maximum Continuous Drain Current

6.8 A, 9 A

Maximum Drain Source Voltage

30 V

Package Type

PDI3333

Series

DMC3016LNS

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ, 38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2 V, 2.4 V

Minimum Gate Threshold Voltage

1.2 V, 1.4 V

Maximum Power Dissipation

2 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

3.15mm

Typical Gate Charge @ Vgs

19.7 nC @ 15 V, 21 nC @ 15 V

Width

3.15mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Height

0.8mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Dual N/P-Channel MOSFET, 6.8 A, 9 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LNS-7
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P.O.A.

Dual N/P-Channel MOSFET, 6.8 A, 9 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LNS-7
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N, P

Maximum Continuous Drain Current

6.8 A, 9 A

Maximum Drain Source Voltage

30 V

Package Type

PDI3333

Series

DMC3016LNS

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

20 mΩ, 38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2 V, 2.4 V

Minimum Gate Threshold Voltage

1.2 V, 1.4 V

Maximum Power Dissipation

2 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

3.15mm

Typical Gate Charge @ Vgs

19.7 nC @ 15 V, 21 nC @ 15 V

Width

3.15mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Height

0.8mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more