Diodes Inc N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-323 DMG1012UW-7

Κωδικός Προϊόντος της RS: 122-0203Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMG1012UW-7
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

290 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

1

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.737 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 150,00

€ 0,05 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 186,00

€ 0,062 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-323 DMG1012UW-7

€ 150,00

€ 0,05 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 186,00

€ 0,062 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 1 A, 20 V, 3-Pin SOT-323 DMG1012UW-7

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

290 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

1

Width

1.35mm

Length

2.2mm

Typical Gate Charge @ Vgs

0.737 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more